Subwavelength Si nanowire arrays for self-cleaning antireflection coatings
Galvanic wet etching was adopted to fabricate Si nanowire arrays (NWAs) as a near-perfect subwavelength structure (SWS), which is an optically effective gradient-index antireflection (AR) surface and also exhibits super-hydrophobicity with an extremely high water contact angle (159[degree]). Fresnel...
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Veröffentlicht in: | Journal of materials chemistry 2010-01, Vol.20 (48), p.10924-10930 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Galvanic wet etching was adopted to fabricate Si nanowire arrays (NWAs) as a near-perfect subwavelength structure (SWS), which is an optically effective gradient-index antireflection (AR) surface and also exhibits super-hydrophobicity with an extremely high water contact angle (159[degree]). Fresnel reflection and diffuse reflection over the broad spectrum can be eliminated by a Si NWA AR coating. Moreover, Si NWA SWSs show polarization-independent and omnidirectional AR properties. The wavelength-averaged specular and diffuse reflectance of Si NWA SWSs are as low as 0.06% and 2.51%, respectively. The effects of the surface profile of this biomimetic SWS on the AR and super-hydrophobic properties were investigated systematically. |
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ISSN: | 0959-9428 1364-5501 |
DOI: | 10.1039/C0JM00524J |