BN-Enabled Epitaxy of Pb sub(1-x)Sn sub(x)Se Nanoplates on SiO sub(2)/Si for High-Performance Mid-Infrared Detection

By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb sub(1-x)Sn sub(x)Se nanoplates are directly grown on SiO sub(2)/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb sub(1-x)Sn...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-10, Vol.11 (40), p.5388-5394
Hauptverfasser:	Wang, Qisheng, Wen, Yao, Yao, Fengrui, Huang, Yun, Wang, Zhenxing, Li, Molin, Zhan, Xueying, Xu, Kai, Wang, Fengmei, Wang, Feng, Li, Jie, Liu, Kaihui, Jiang, Chao, Liu, Fengqi, He, Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier mobility Compatibility Crystal structure Crystals Insulators Nanostructure Silicon Silicon dioxide
Online-Zugang:	Volltext
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