BN-Enabled Epitaxy of Pb sub(1-x)Sn sub(x)Se Nanoplates on SiO sub(2)/Si for High-Performance Mid-Infrared Detection

BN-Enabled Epitaxy of Pb sub(1-x)Sn sub(x)Se Nanoplates on SiO sub(2)/Si for High-Performance Mid-Infrared Detection

By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb sub(1-x)Sn sub(x)Se nanoplates are directly grown on SiO sub(2)/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb sub(1-x)Sn...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-10, Vol.11 (40), p.5388-5394
Hauptverfasser: Wang, Qisheng, Wen, Yao, Yao, Fengrui, Huang, Yun, Wang, Zhenxing, Li, Molin, Zhan, Xueying, Xu, Kai, Wang, Fengmei, Wang, Feng, Li, Jie, Liu, Kaihui, Jiang, Chao, Liu, Fengqi, He, Jun
Format: Artikel
Sprache:eng
Schlagworte:
Carrier mobility
Compatibility
Crystal structure
Crystals
Insulators
Nanostructure
Silicon
Silicon dioxide
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Zusammenfassung:By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb sub(1-x)Sn sub(x)Se nanoplates are directly grown on SiO sub(2)/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb sub(1-x)Sn sub(x)Se nanoplates exhibit a room-temperature carrier mobility of 0.73-4.90 cm super(2) V super(-1) s super(-1), comparable to layered materials and molecular crystals, and high-efficiency mid-IR detection (1.9-2.0 mu m).
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201502049