BN-Enabled Epitaxy of Pb sub(1-x)Sn sub(x)Se Nanoplates on SiO sub(2)/Si for High-Performance Mid-Infrared Detection
By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb sub(1-x)Sn sub(x)Se nanoplates are directly grown on SiO sub(2)/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb sub(1-x)Sn...
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| Veröffentlicht in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-10, Vol.11 (40), p.5388-5394 |
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| creator | Wang, Qisheng Wen, Yao Yao, Fengrui Huang, Yun Wang, Zhenxing Li, Molin Zhan, Xueying Xu, Kai Wang, Fengmei Wang, Feng Li, Jie Liu, Kaihui Jiang, Chao Liu, Fengqi He, Jun |
| description | By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb sub(1-x)Sn sub(x)Se nanoplates are directly grown on SiO sub(2)/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb sub(1-x)Sn sub(x)Se nanoplates exhibit a room-temperature carrier mobility of 0.73-4.90 cm super(2) V super(-1) s super(-1), comparable to layered materials and molecular crystals, and high-efficiency mid-IR detection (1.9-2.0 mu m). |
| doi_str_mv | 10.1002/smll.201502049 |
| format | Article |
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| ispartof | Small (Weinheim an der Bergstrasse, Germany), 2015-10, Vol.11 (40), p.5388-5394 |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Carrier mobility Compatibility Crystal structure Crystals Insulators Nanostructure Silicon Silicon dioxide |
| title | BN-Enabled Epitaxy of Pb sub(1-x)Sn sub(x)Se Nanoplates on SiO sub(2)/Si for High-Performance Mid-Infrared Detection |
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