Wavelength Conversion Based on Raman- and Non-Resonant Four-Wave Mixing in Silicon Nanowire Rings Without Dispersion Engineering
We propose an efficient wavelength conversion scheme that is based on either Raman-resonant four-wave mixing or non-resonant Kerr-induced four-wave mixing in a silicon nanowire ring, and that does not require dispersion engineering of the nanowire. We rely on the spatial variation of the Raman and K...
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Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2011-07, Vol.17 (4), p.1078-1091 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We propose an efficient wavelength conversion scheme that is based on either Raman-resonant four-wave mixing or non-resonant Kerr-induced four-wave mixing in a silicon nanowire ring, and that does not require dispersion engineering of the nanowire. We rely on the spatial variation of the Raman and Kerr susceptibilities around the ring to quasi-phase match the wavelength conversion processes for TE polarized fields. The flexibility of this quasi-phase-matching scheme can lead to wavelength conversion efficiencies from -26.7 dB to values larger than 0 dB, and in certain circumstances makes it possible to outperform conventional phase-matched conversion in a dispersion-engineered silicon ring by factors exceeding 6 dB. |
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ISSN: | 1077-260X 1558-4542 |
DOI: | 10.1109/JSTQE.2010.2086437 |