Wavelength Conversion Based on Raman- and Non-Resonant Four-Wave Mixing in Silicon Nanowire Rings Without Dispersion Engineering

We propose an efficient wavelength conversion scheme that is based on either Raman-resonant four-wave mixing or non-resonant Kerr-induced four-wave mixing in a silicon nanowire ring, and that does not require dispersion engineering of the nanowire. We rely on the spatial variation of the Raman and K...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2011-07, Vol.17 (4), p.1078-1091
Hauptverfasser: Vermeulen, N., Sipe, J. E., Lefevre, Y., Debaes, C., Thienpont, H.
Format: Artikel
Sprache:eng
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Zusammenfassung:We propose an efficient wavelength conversion scheme that is based on either Raman-resonant four-wave mixing or non-resonant Kerr-induced four-wave mixing in a silicon nanowire ring, and that does not require dispersion engineering of the nanowire. We rely on the spatial variation of the Raman and Kerr susceptibilities around the ring to quasi-phase match the wavelength conversion processes for TE polarized fields. The flexibility of this quasi-phase-matching scheme can lead to wavelength conversion efficiencies from -26.7 dB to values larger than 0 dB, and in certain circumstances makes it possible to outperform conventional phase-matched conversion in a dispersion-engineered silicon ring by factors exceeding 6 dB.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2010.2086437