Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO sub(x) Based Memristive Devices

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO sub(x) Based Memristive Devices

By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta sub(2)O sub(5)/Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light o...

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Veröffentlicht in:Advanced materials (Weinheim) 2015-10, Vol.27 (40), p.6202-6207
Hauptverfasser: Luebben, Michael, Karakolis, Panagiotis, Ioannou-Sougleridis, Vassilios, Normand, Pascal, Dimitrakis, Panagiotis, Valov, Ilia
Format: Artikel
Sprache:eng
Schlagworte:
Devices
Electrochemical machining
Graphene
Graphical user interface
Moisture
Switching
Tantalum
Tantalum oxides
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Zusammenfassung:By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta sub(2)O sub(5)/Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaO sub(x). The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201502574