The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor

The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor

A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na(+) ions was used to create a field-effect transistor based memory device. Addition of Na(+) ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristi...

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Veröffentlicht in:Chemical communications (Cambridge, England) England), 2014-04, Vol.50 (31), p.4112-4114
Hauptverfasser: Moon, Kyeong-Ju, Lee, Tae Il, Lee, Sang-Hoon, Myoung, Jae-Min
Format: Artikel
Sprache:eng
Schlagworte:
Data storage
Dielectrics
Field effect transistors
Memory devices
Microscopy, Electron, Transmission
Nanostructure
Nanowires
Nanowires - chemistry
Nanowires - ultrastructure
Semiconductor devices
Silicon
Silicon - chemistry
Sodium
Sodium - chemistry
Transistors, Electronic
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Beschreibung
Zusammenfassung:A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na(+) ions was used to create a field-effect transistor based memory device. Addition of Na(+) ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.
ISSN:1359-7345
1364-548X
DOI:10.1039/c4cc00749b