Hybrid Area-Emitting Transistors: Solution Processable and with High Aperture Ratios

Area emission is realized in all‐solution‐processed hybrid light‐emitting transistors (HLETs). A new HLET design is presented with increased aperture ratio, and optical and electrical characteristics are shown.

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Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Weinheim) 2015-11, Vol.27 (42), p.6677-6682
Hauptverfasser:	Muhieddine, Khalid, Ullah, Mujeeb, Maasoumi, Fatemeh, Burn, Paul. L., Namdas, Ebinazar B.
Format:	Artikel
Sprache:	eng
Schlagworte:	actove-matrix organic light-emitting diodes (AMOLEDs) Apertures displays Emission light-emitting transistors organic light-emitting diodes (OLEDs) organic transistors Semiconductor devices Transistors
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Beschreibung
Zusammenfassung:	Area emission is realized in all‐solution‐processed hybrid light‐emitting transistors (HLETs). A new HLET design is presented with increased aperture ratio, and optical and electrical characteristics are shown.
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201502554