Resistivity and Hall voltage in gold thin films deposited on mica at room temperature

•We determined the 4K thickness dependence of resistivity for a family of gold thin films.•We determined the thickness dependence of resistivity during the growth process.•Both behaviors are well represented by the Mayadas–Shatzkes theory.•We determined Hall tangent and Hall resistance at 4K and up to 4.5T.•Hall mobility is always higher than the drift mobility. We report the thickness dependence of the resistivity measured at 4K of gold films grown onto mica at room temperature (RT), for thickness ranging from 8 to 100nm. This dependence was compared to the one obtained for a sample during its growth process at RT. Both behaviors are well represented by the Mayadas–Shatzkes theory. Using this model, we found comparable contributions of electron surface and electron grain boundary scattering to the resistivity at 4K. Hall effect measurements were performed using a variable transverse magnetic field up to 4.5T. Hall tangent and Hall resistance exhibit a linear dependence on the magnetic field. For this magnetic field range, the Hall mobility is always larger than the drift mobility. This result is explained through the presence of the above-mentioned scattering mechanisms acting on the galvanomagnetic coefficients. In addition, we report the temperature dependence of the resistivity between 4 and 70K.