Ge4+ doped TiO2 for stoichiometric degradation of warfare agents

► We prepared nanodisperse Ge4+ doped titania by a novel synthesis method. ► Synthesis does not involve organic solvents, organometallics nor thermal processes. ► The prepared materials are efficient in removal of chemical warfare agents. ► Ge4+ doping improves rate of removal of soman and agent VX by TiO2. Germanium doped TiO2 was prepared by homogeneous hydrolysis of aqueous solutions of GeCl4 and TiOSO4 with urea. The synthesized samples were characterized by X-ray diffraction, scanning electron microscopy, EDS analysis, specific surface area (BET) and porosity determination (BJH). Ge4+ doping increases surface area and content of amorphous phase in prepared samples. These oxides were used in an experimental evaluation of their reactivity with chemical warfare agent, sulphur mustard, soman and agent VX. Ge4+ doping worsens sulphur mustard degradation and improves soman and agent VX degradation. The best degree of removal (degradation), 100% of soman, 99% of agent VX and 95% of sulphur mustard, is achieved with sample with 2wt.% of germanium.