Morphological and electrical properties of few layer graphene after nitrogen doping by LPCVD technique

Carbon materials doped with only one kind of C-N bonding configuration are a great outlook for studying doping effects on the electronic structure and electrical properties. Synthesis of nitrogen-doped few-layer graphene films on Cu foil is achieved by low pressure chemical vapor deposition (LPCVD). For investigation of nitrogen doped effect on structural, morphological and electrical properties of graphene the reactive gas was a mixture of 0-14 and NH[sub 3] with the different ratio 0-14 and NH[sub 3] by volume at the constant pressure of the growth chamber. The study on electrical properties emphasized that the dependence of current with voltage for all samples was linear like behavior, and sample conductivity was decreased with increasing the percent of nitrogen in gas mixture. The results showed that nitrogen-doped graphene can be successfully synthesized and also chemical nitrogen doping can be change the electrical conductivity of the graphene.