Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10 000 bending cycles.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2016-03, Vol.28 (9), p.1818-1823
Hauptverfasser: Chang, Hsiao-Yu, Yogeesh, Maruthi Nagavalli, Ghosh, Rudresh, Rai, Amritesh, Sanne, Atresh, Yang, Shixuan, Lu, Nanshu, Banerjee, Sanjay Kumar, Akinwande, Deji
Format: Artikel
Sprache:eng
Schlagworte:
2D materials
CVD-growth
flexible electronics
molybdenum disulfide
radio frequency
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10 000 bending cycles.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201504309