Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy

Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy

Lateral WS2–MoS2 heterostructures are synthesized by a shortcut one‐step growth recipe with low‐cost and soluble salts. The 2D spatial distributions of the built‐in potential and the related electric field of the lateral WS2–MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe f...

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Veröffentlicht in:Advanced materials (Weinheim) 2015-11, Vol.27 (41), p.6431-6437
Hauptverfasser: Chen, Kun, Wan, Xi, Xie, Weiguang, Wen, Jinxiu, Kang, Zhiwen, Zeng, Xiaoliang, Chen, Huanjun, Xu, Jianbin
Format: Artikel
Sprache:eng
Schlagworte:
built-in electric fields
built-in potential
depletion-layer width
heterostructures
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Zusammenfassung:Lateral WS2–MoS2 heterostructures are synthesized by a shortcut one‐step growth recipe with low‐cost and soluble salts. The 2D spatial distributions of the built‐in potential and the related electric field of the lateral WS2–MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201502375