Optical and surface properties of semiconducting glassy thin films prepared by RF sputtering technique from B2O3a<?<ce:hsp sp="0.10"/>Na2O<ce:hsp sp="0.10"/>a<?<ce:hsp sp="0.10"/>MgO<ce:hsp sp="0.10"/>a<?<ce:hsp sp="0.10"/>V2O5:CoO glass targets
In this paper we have reported the optical and surface properties of semiconducting glassy thin films prepared by RF sputtering technique with argon gas plasma under vacuum from different compositions of 80B2O3+15Na2O+(5-|>x)MgO+|>xV2O5:(0.5CoO) (x=0.5, 1) glass targets. The changes caused by...
Gespeichert in:
Veröffentlicht in: | Materials letters 2012-02, Vol.68, p.193-196 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In this paper we have reported the optical and surface properties of semiconducting glassy thin films prepared by RF sputtering technique with argon gas plasma under vacuum from different compositions of 80B2O3+15Na2O+(5-|>x)MgO+|>xV2O5:(0.5CoO) (x=0.5, 1) glass targets. The changes caused by varying V2O5 ratios of glassy films on physical properties were examined. As a result of XRD analysis of obtained glassy thin films, these films were observed to have an amorphous structure. Surface characteristics were determined by atomic force microscope, absorption spectra were obtained by spectrophotometer and refractive indices were determined with ellipsometer. The fundamental absorption edge for the present glassy thin films has been analyzed using the theory proposed by Davis and Mott. Optical band gaps for direct and indirect transitions and Urbach energies were calculated and interpreted. |
---|---|
ISSN: | 0167-577X |
DOI: | 10.1016/j.matlet.2011.10.047 |