Isotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range

Specific samples containing 18O and 16O are used to measure the variations of the relative ion yields of boron, oxygen and silicon as a function of oxygen concentration. 18O and 16O are used to implement an Isotopic Comparative Method (ICM) which allows to correct the matrix effects involved by the presence of a high concentration of oxygen in the sample: the near‐flat profile of 18O, measured in the ‘dilute’, linear regime (weak concentration) is used to calculate the real concentration of 16O. The ion yields of B+, O+, Si+, O− and Si− are measured as a function of the oxygen concentration. For B+ ion yield, the variation is important whereas they are weak for Si± and O± ion yields for the range [0–12 at.%]. This ICM applied to oxygen in silicon can be considered as an interesting complementary method of previous ‘16O implantation method’ and of ‘18O single marker method’. Copyright © 2010 John Wiley & Sons, Ltd.