Cyclostationary noise modeling of radio frequency devices
Summary We present a review of the current status of research in the modeling and simulation of cyclostationary (nonlinear) noise properties of semiconductor active devices operated in forced large‐signal conditions, a typical operating regime for high‐frequency applications. We discuss both the cas...
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| Veröffentlicht in: | International journal of numerical modelling 2015-11, Vol.28 (6), p.659-674 |
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| container_title | International journal of numerical modelling |
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| creator | Bonani, F. Guerrieri, S. Donati Ghione, G. |
| description | Summary
We present a review of the current status of research in the modeling and simulation of cyclostationary (nonlinear) noise properties of semiconductor active devices operated in forced large‐signal conditions, a typical operating regime for high‐frequency applications. We discuss both the case of physics‐based device simulations, where numerical burden is the most important issue, and the derivation of compact cyclostationary noise models. In the latter case, both phenomenological amplitude modulation approaches and the derivation of consistent analytical device descriptions are discussed. We show examples of both physics‐based simulations of the noise properties of a realistic high‐electron mobility transistor resistive mixer and show for the first time the application of a novel, fully analytical cyclostationary noise bipolar transistor model. Copyright © 2014 John Wiley & Sons, Ltd. |
| doi_str_mv | 10.1002/jnm.2035 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1762117704</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1762117704</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3595-9d9ac1733a6b6faeeb9f3eb80a50808ec42f8fa71bd51a33e2de1e430599b54c3</originalsourceid><addsrcrecordid>eNp10M1KxDAUBeAgCo6j4CMU3LjpeNM0bbPUQcefcdwoLkOa3kjGttGko_bt7TCiKLi6m4_DuYeQQwoTCpCcLNtmkgDjW2REQYiYJpBukxEUIo0Zy2GX7IWwBABGeTIiYtrr2oVOdda1yvdR62zAqHEV1rZ9ipyJvKqsi4zH1xW2uo8qfLMawz7ZMaoOePB1x-Th4vx-ehnP72ZX09N5rBkXPBaVUJrmjKmszIxCLIVhWBagOBRQoE4TUxiV07LiVDGGSYUUUwZciJKnmo3J8Sb3xbuhQehkY4PGulYtulWQNM8SSvMc0oEe_aFLt_Lt0G5QCU0zQSn7CdTeheDRyBdvm-F3SUGuN5TDhnK94UDjDX23Nfb_Onm9uP3tbejw49sr_yyznOVcPi5mcn4zEwtRpPKMfQLLiIDN</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1721469113</pqid></control><display><type>article</type><title>Cyclostationary noise modeling of radio frequency devices</title><source>Access via Wiley Online Library</source><creator>Bonani, F. ; Guerrieri, S. Donati ; Ghione, G.</creator><creatorcontrib>Bonani, F. ; Guerrieri, S. Donati ; Ghione, G.</creatorcontrib><description>Summary
We present a review of the current status of research in the modeling and simulation of cyclostationary (nonlinear) noise properties of semiconductor active devices operated in forced large‐signal conditions, a typical operating regime for high‐frequency applications. We discuss both the case of physics‐based device simulations, where numerical burden is the most important issue, and the derivation of compact cyclostationary noise models. In the latter case, both phenomenological amplitude modulation approaches and the derivation of consistent analytical device descriptions are discussed. We show examples of both physics‐based simulations of the noise properties of a realistic high‐electron mobility transistor resistive mixer and show for the first time the application of a novel, fully analytical cyclostationary noise bipolar transistor model. Copyright © 2014 John Wiley & Sons, Ltd.</description><identifier>ISSN: 0894-3370</identifier><identifier>EISSN: 1099-1204</identifier><identifier>DOI: 10.1002/jnm.2035</identifier><language>eng</language><publisher>Bognor Regis: Blackwell Publishing Ltd</publisher><subject>Computer simulation ; cyclostationary noise ; Derivation ; Devices ; Mathematical analysis ; Mathematical models ; Noise ; semiconductor device modeling ; semiconductor device noise ; Semiconductor devices ; Semiconductors</subject><ispartof>International journal of numerical modelling, 2015-11, Vol.28 (6), p.659-674</ispartof><rights>Copyright © 2014 John Wiley & Sons, Ltd.</rights><rights>Copyright © 2015 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c3595-9d9ac1733a6b6faeeb9f3eb80a50808ec42f8fa71bd51a33e2de1e430599b54c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fjnm.2035$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fjnm.2035$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,781,785,1418,27928,27929,45578,45579</link.rule.ids></links><search><creatorcontrib>Bonani, F.</creatorcontrib><creatorcontrib>Guerrieri, S. Donati</creatorcontrib><creatorcontrib>Ghione, G.</creatorcontrib><title>Cyclostationary noise modeling of radio frequency devices</title><title>International journal of numerical modelling</title><addtitle>Int. J. Numer. Model</addtitle><description>Summary
We present a review of the current status of research in the modeling and simulation of cyclostationary (nonlinear) noise properties of semiconductor active devices operated in forced large‐signal conditions, a typical operating regime for high‐frequency applications. We discuss both the case of physics‐based device simulations, where numerical burden is the most important issue, and the derivation of compact cyclostationary noise models. In the latter case, both phenomenological amplitude modulation approaches and the derivation of consistent analytical device descriptions are discussed. We show examples of both physics‐based simulations of the noise properties of a realistic high‐electron mobility transistor resistive mixer and show for the first time the application of a novel, fully analytical cyclostationary noise bipolar transistor model. Copyright © 2014 John Wiley & Sons, Ltd.</description><subject>Computer simulation</subject><subject>cyclostationary noise</subject><subject>Derivation</subject><subject>Devices</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Noise</subject><subject>semiconductor device modeling</subject><subject>semiconductor device noise</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><issn>0894-3370</issn><issn>1099-1204</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp10M1KxDAUBeAgCo6j4CMU3LjpeNM0bbPUQcefcdwoLkOa3kjGttGko_bt7TCiKLi6m4_DuYeQQwoTCpCcLNtmkgDjW2REQYiYJpBukxEUIo0Zy2GX7IWwBABGeTIiYtrr2oVOdda1yvdR62zAqHEV1rZ9ipyJvKqsi4zH1xW2uo8qfLMawz7ZMaoOePB1x-Th4vx-ehnP72ZX09N5rBkXPBaVUJrmjKmszIxCLIVhWBagOBRQoE4TUxiV07LiVDGGSYUUUwZciJKnmo3J8Sb3xbuhQehkY4PGulYtulWQNM8SSvMc0oEe_aFLt_Lt0G5QCU0zQSn7CdTeheDRyBdvm-F3SUGuN5TDhnK94UDjDX23Nfb_Onm9uP3tbejw49sr_yyznOVcPi5mcn4zEwtRpPKMfQLLiIDN</recordid><startdate>201511</startdate><enddate>201511</enddate><creator>Bonani, F.</creator><creator>Guerrieri, S. Donati</creator><creator>Ghione, G.</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>201511</creationdate><title>Cyclostationary noise modeling of radio frequency devices</title><author>Bonani, F. ; Guerrieri, S. Donati ; Ghione, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3595-9d9ac1733a6b6faeeb9f3eb80a50808ec42f8fa71bd51a33e2de1e430599b54c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Computer simulation</topic><topic>cyclostationary noise</topic><topic>Derivation</topic><topic>Devices</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Noise</topic><topic>semiconductor device modeling</topic><topic>semiconductor device noise</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bonani, F.</creatorcontrib><creatorcontrib>Guerrieri, S. Donati</creatorcontrib><creatorcontrib>Ghione, G.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>International journal of numerical modelling</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bonani, F.</au><au>Guerrieri, S. Donati</au><au>Ghione, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cyclostationary noise modeling of radio frequency devices</atitle><jtitle>International journal of numerical modelling</jtitle><addtitle>Int. J. Numer. Model</addtitle><date>2015-11</date><risdate>2015</risdate><volume>28</volume><issue>6</issue><spage>659</spage><epage>674</epage><pages>659-674</pages><issn>0894-3370</issn><eissn>1099-1204</eissn><abstract>Summary
We present a review of the current status of research in the modeling and simulation of cyclostationary (nonlinear) noise properties of semiconductor active devices operated in forced large‐signal conditions, a typical operating regime for high‐frequency applications. We discuss both the case of physics‐based device simulations, where numerical burden is the most important issue, and the derivation of compact cyclostationary noise models. In the latter case, both phenomenological amplitude modulation approaches and the derivation of consistent analytical device descriptions are discussed. We show examples of both physics‐based simulations of the noise properties of a realistic high‐electron mobility transistor resistive mixer and show for the first time the application of a novel, fully analytical cyclostationary noise bipolar transistor model. Copyright © 2014 John Wiley & Sons, Ltd.</abstract><cop>Bognor Regis</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/jnm.2035</doi><tpages>16</tpages><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | Computer simulation cyclostationary noise Derivation Devices Mathematical analysis Mathematical models Noise semiconductor device modeling semiconductor device noise Semiconductor devices Semiconductors |
| title | Cyclostationary noise modeling of radio frequency devices |
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