Cyclostationary noise modeling of radio frequency devices

Summary We present a review of the current status of research in the modeling and simulation of cyclostationary (nonlinear) noise properties of semiconductor active devices operated in forced large‐signal conditions, a typical operating regime for high‐frequency applications. We discuss both the case of physics‐based device simulations, where numerical burden is the most important issue, and the derivation of compact cyclostationary noise models. In the latter case, both phenomenological amplitude modulation approaches and the derivation of consistent analytical device descriptions are discussed. We show examples of both physics‐based simulations of the noise properties of a realistic high‐electron mobility transistor resistive mixer and show for the first time the application of a novel, fully analytical cyclostationary noise bipolar transistor model. Copyright © 2014 John Wiley & Sons, Ltd.