Radical-cation salt with novel BEDT-TTF packing motif containing tris(oxalato)germanate(IV)

[Display omitted] •New radical-cation salt.•Novel BEDT-TTF packing motif.•Synthesis, crystal structure and resistivity of new semiconductor.•First use of previously unreported caesium tris(oxalato) germanate. The synthesis, crystal structure and resistivity of a new semiconducting BEDT-TTF radical-cation salt containing the tris(oxalato)germanate(IV) anion is reported. BEDT-TTF4[Ge(C2O4)3].0.5dichloromethane crystallizes in the space group P21/c, a=18.322(7), b=11.919(4), c=32.746(11) Å, β=105.797(5)°, V=6881(4) Å3, T=295(1) K, Z=4. Electrical resistivity measurements show that BEDT-TTF4[Ge(C2O4)3].0.5dichloromethane is a semiconductor with an activation energy of 0.224eV and room temperature resistivity of 212Ωcm.