GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy

GaSb/GaAs quantum dots (QDs) and quantum rings (QRs) are investigated. By using periodical growth interrupts, precise coverage control can be achieved for GaSb QD growth by using a single Ga source. With direct As irradiation to the substrate surface during the post soaking time, the soaking time ca...

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Veröffentlicht in:	Journal of crystal growth 2015-09, Vol.425, p.283-286
Hauptverfasser:	Chen, Hsuan-An, Shih, Tung-Chuan, Tang, Shiang-Feng, Weng, Ping-Kuo, Gau, Yau-Tang, Lin, Shih-Yen
Format:	Artikel
Sprache:	eng
Schlagworte:	A1 Nanostructures A3 Molecular beam epitaxy Crystal growth Gallium arsenide Gallium arsenides Interrupts Luminescence Molecular beam epitaxy Quantum dots Soaking
Online-Zugang:	Volltext
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