GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy

GaSb/GaAs quantum dots (QDs) and quantum rings (QRs) are investigated. By using periodical growth interrupts, precise coverage control can be achieved for GaSb QD growth by using a single Ga source. With direct As irradiation to the substrate surface during the post soaking time, the soaking time can be effectively reduced while full ring morphologies and room-temperature QR luminescence can still be obtained by using this method. •GaSb QDs and QRs are grown with periodical growth interrupt by single Ga source.•Full dot- or ring- morphologies are obtained with controlled Sb/As flux ratios.•Superior PL intensities are observed for GaSb QDs and QRs grown by this method.