Study of single crystal CuInSe sub(2) thin films and CuGaSe sub(2)/CuInSe sub(2) single quantum well grown by molecular beam epitaxy

High quality CuGaSe sub(2) and CuInSe sub(2) single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe sub(2) is grown on CuInSe sub(2) at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe sub(2)/CuInSe sub(2). This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe sub(2)/CuInSe sub(2) single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.