Effects of low melting point materials on sinterability and microwave dielectric properties of X sub(2)SiO sub(4)-CaTiO sub(3) (X = Mg, Zn) for LTCC
The effect of adding different low melting point compounds on the crystalline phases, microstructure and microwave dielectric properties of the X sub(2)SiO sub(4)-CaTiO sub(3) (X = Mg, Zn) ceramics was compared. The 0.91Mg sub(2)SiO sub(4)-0. 09CaTiO sub(3) samples doped with 15.0-35.0 wt% ZB glass...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2015-01, Vol.26 (11), p.9195-9199 |
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Sprache: | eng |
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Zusammenfassung: | The effect of adding different low melting point compounds on the crystalline phases, microstructure and microwave dielectric properties of the X sub(2)SiO sub(4)-CaTiO sub(3) (X = Mg, Zn) ceramics was compared. The 0.91Mg sub(2)SiO sub(4)-0. 09CaTiO sub(3) samples doped with 15.0-35.0 wt% ZB glass were unsintered at 950 degree C for 3 h in air. The grains were denser, as the 0.91Mg sub(2)SiO sub(4)-0. 09CaTiO sub(3) samples were doped with 12.0 wt% BLB and the 0.95Zn sub(2)SiO sub(4)-0. 05CaTiO sub(3) samples were doped with 4.0 wt% LB or 7.0 wt% BLB at 950 degree C for 3 h in air. Adding 2.0-6.0 wt% LB to the 0.95Zn sub(2)SiO sub(4)-0. 05CaTiO sub(3) ceramics, the sintering temperature was lowered to 950 degree C, the relative density values of the ceramics were more than 90 %, and the Q f values were more than 18,000 GHz (f = 7.1 GHz). However, the 0.91Mg sub(2)SiO sub(4)-0. 09CaTiO sub(3) ceramics doped with 4.0-8.0 wt% LB were not dense, and the Q f values were lower than 6500 GHz (f = 7.1 GHz) at 950 degree C for 3 h. For the 0.95Zn sub(2)SiO sub(4)-0. 05CaTiO sub(3) ceramics doped with 6.5-8.5 wt% BLB and the 0.91Mg sub(2)SiO sub(4)-0. 09CaTiO sub(3) ceramics doped with 10.0-14.0 wt% BLB, the relative density of the two kinds of the ceramics can reach to 94 %, and the maximum Q f values of the ceramics were both more than 11,000 GHz (f = 6.1 GHz). |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-015-3611-1 |