Molecular Dynamics Simulation of the Deformation of Single Crystal Gallium Arsenide

Three-dimensional molecular dynamics (3D MD) simulation was carried out to investigate the deformation of single crystal gallium arsenide (GaAs) during nanoindentation. Tersoff potential was used to simulate the atomistic interaction under an extremely low load of indentation. The coordination numbe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied Mechanics and Materials 2014-05, Vol.553 (Advances in Computational Mechanics), p.60-65
Hauptverfasser: Lu, Ming Yuan, Huang, Han, Fang, Feng Zhou, Chen, Y.H., Hu, X.T., Wu, Y.Q.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Three-dimensional molecular dynamics (3D MD) simulation was carried out to investigate the deformation of single crystal gallium arsenide (GaAs) during nanoindentation. Tersoff potential was used to simulate the atomistic interaction under an extremely low load of indentation. The coordination number and atomic displacement were studied and the cross-sectional profiles of the simulated indent were examined. The simulation results revealed that the lattice deformation of GaAs was influenced by polarity, showing distinct patterns on different crystalline planes. Slip band and dislocation were found to be the dominant deformation phenomena.
ISSN:1660-9336
1662-7482
1662-7482
DOI:10.4028/www.scientific.net/AMM.553.60