High-aspect-ratio patterning by ClF sub(3)-Ar neutral cluster etching
A new facile method is described for high-aspect-ratio patterning by a neutral cluster beam. In this study, we selected a ClF sub(3)-Ar neutral cluster beam in order to eliminate the charge-up damage caused by plasma etching. We succeeded in achieving features with high-aspect-ratio patterns, which...
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Veröffentlicht in: | Microelectronic engineering 2015-06, Vol.141, p.145-149 |
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Sprache: | eng |
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Zusammenfassung: | A new facile method is described for high-aspect-ratio patterning by a neutral cluster beam. In this study, we selected a ClF sub(3)-Ar neutral cluster beam in order to eliminate the charge-up damage caused by plasma etching. We succeeded in achieving features with high-aspect-ratio patterns, which is a 60 nm line width on a 180 nm pitch, by ClF sub(3)-Ar neutral cluster etching. We confirmed how small feature sizes with high aspect ratio can be fabricated using this neutral cluster beam. Moreover, we successfully presented features with an aspect ratio larger than 10 at less than 100 nm feature size. These results indicated that high-speed anisotropic etching with low damage can be applied to the etching of less than 100 nm feature size with a high aspect ratio. This etching method may enable the realization sub-10 nm high-aspect-ratio etching if the process is further modified. |
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ISSN: | 0167-9317 |
DOI: | 10.1016/j.mee.2015.03.006 |