Freestanding Artificial Synapses Based on Laterally Proton-Coupled Transistors on Chitosan Membranes

Freestanding Artificial Synapses Based on Laterally Proton-Coupled Transistors on Chitosan Membranes

Freestanding synaptic transistors are fabricated on solution‐processed chitosan membranes. A short‐term memory to long‐term memory transition is observed due to proton‐related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial synaptic devices with multiple presy...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2015-10, Vol.27 (37), p.5599-5604
Hauptverfasser: Liu, Yang Hui, Zhu, Li Qiang, Feng, Ping, Shi, Yi, Wan, Qing
Format: Artikel
Sprache:eng
Schlagworte:
Action Potentials
Chitosan
Chitosan - chemistry
chitosan membranes
Elasticity
Excitatory Postsynaptic Potentials
freestanding synaptic transistors
Logic
Materials Testing
Membranes
Membranes, Artificial
Models, Neurological
Modulation
Neuronal Plasticity
Protons
Semiconductor devices
Solutions
Spiking
spiking logic
Synapses
Synapses - chemistry
synaptic plasticity
Transistors
Transistors, Electronic
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Freestanding synaptic transistors are fabricated on solution‐processed chitosan membranes. A short‐term memory to long‐term memory transition is observed due to proton‐related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial synaptic devices with multiple presynaptic inputs are investigated, and spiking logic operation and logic modulation are realized.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201502719