Monolithic SOI pixel detector with a wide dynamic range and a high frame rate for FEL-applications

Monolithic pixel detector implemented in 200 nm silicon-on-insulator technology for x-ray imaging applications will be presented. The detection is based on a fully-depleted high-resistance substrate, isolated by the buried silicon dioxide from the electronics layer. The pixel electronics contains a...

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Veröffentlicht in:	Journal of instrumentation 2014-05, Vol.9 (5), p.C05031-C05031
1. Verfasser:	Peric, I
Format:	Artikel
Sprache:	eng
Schlagworte:	Detectors Dynamic range Electronics Free electron lasers Imaging Instrumentation Photons Pixels
Online-Zugang:	Volltext
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