Monolithic SOI pixel detector with a wide dynamic range and a high frame rate for FEL-applications

Monolithic pixel detector implemented in 200 nm silicon-on-insulator technology for x-ray imaging applications will be presented. The detection is based on a fully-depleted high-resistance substrate, isolated by the buried silicon dioxide from the electronics layer. The pixel electronics contains a wide dynamic range integrator that is able to measure and to digitize the number of photons in a wide signal range. The detector is a simple and cheap alternative for the hybrid pixel imaging detectors. The experimental results obtained with the second prototype will be presented. The aimed application is the free electron laser.