1/f Noise Scaling Analysis in Unipolar-Type Organic Nanocomposite Resistive Memory

We studied noise characteristics of a nanocomposite of polyimide (PI) and phenyl-C61-butyric acid methyl ester (PCBM) (denoted as PI:PCBM), a composite for the organic nonvolatile resistive memory material. The current fluctuations were investigated over a bias range that covers various intermediate...

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Veröffentlicht in:ACS nano 2015-07, Vol.9 (7), p.7697-7703
Hauptverfasser: Song, Younggul, Jeong, Hyunhak, Jang, Jingon, Kim, Tae-Young, Yoo, Daekyoung, Kim, Youngrok, Jeong, Heejun, Lee, Takhee
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Sprache:eng
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Zusammenfassung:We studied noise characteristics of a nanocomposite of polyimide (PI) and phenyl-C61-butyric acid methyl ester (PCBM) (denoted as PI:PCBM), a composite for the organic nonvolatile resistive memory material. The current fluctuations were investigated over a bias range that covers various intermediate resistive states and negative differential resistance (NDR) in organic nanocomposite unipolar resistive memory devices. From the analysis of the 1/f γ type noises, scaling behavior between the relative noise power spectral density S̃ and resistance R was observed, indicating a percolating behavior. Considering a linear rate equation of the charge trapping–detrapping at traps, the percolation behavior and NDR could be understood by the modulation of the conductive phase fraction φ with an external bias. This study can enhance the understanding of the NDR phenomena in organic nanocomposite unipolar resistive memory devices in terms of the current path formation and the memory switching.
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.5b03168