Synthesis of Lateral Heterostructures of Semiconducting Atomic Layers

Atomically thin heterostructures of transition-metal dichalcogenides (TMDs) with various geometrical and energy band alignments are the key materials for next generation flexible nanoelectronics. The individual TMD monolayers can be adjoined laterally to construct in-plane heterostructures, which are difficult to reach with the laborious pick-up-and-transfer method of the exfoliated flakes. The ability to produce copious amounts of high quality layered heterostructures on diverse surfaces is highly desirable but it has remained a challenging issue. Here, we have achieved a direct synthesis of lateral heterostructures of monolayer TMDs: MoS2–WS2 and MoSe2–WSe2. The synthesis was performed using ambient-pressure chemical vapor deposition (CVD) with aromatic molecules as seeding promoters. We discuss possible growth behaviors, and we examine the symmetry and the interface of these heterostructures using second-harmonic generation and atomic-resolution scanning TEM. We found that the one-dimensinal (1D) interface of the lateral heterostructures picks the zigzag direction of the lattice instead of the armchair direction. Our method offers a controllable synthesis to obtain high-quality in-plane heterostructures of TMD atomic layers with 1D interface geometry.