Room-Temperature Near-Infrared High‑Q Perovskite Whispering-Gallery Planar Nanolasers
Near-infrared (NIR) solid-state micro/nanolasers are important building blocks for true integration of optoelectronic circuitry. Although significant progress has been made in III–V nanowire lasers with achieving NIR lasing at room temperature, − challenges remain including low quantum efficiencies...
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Veröffentlicht in: | Nano letters 2014-10, Vol.14 (10), p.5995-6001 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Near-infrared (NIR) solid-state micro/nanolasers are important building blocks for true integration of optoelectronic circuitry. Although significant progress has been made in III–V nanowire lasers with achieving NIR lasing at room temperature, − challenges remain including low quantum efficiencies and high Auger losses. Importantly, the obstacles toward integrating one-dimensional nanowires on the planar ubiquitous Si platform need to be effectively tackled. Here we demonstrate a new family of planar room-temperature NIR nanolasers based on organic–inorganic perovskite CH3NH3PbI3-aXa (X = I, Br, Cl) nanoplatelets. Their large exciton binding energies, long diffusion lengths, and naturally formed high-quality planar whispering-gallery mode cavities ensure adequate gain and efficient optical feedback for low-threshold optically pumped in-plane lasing. We show that these remarkable wavelength tunable whispering-gallery nanolasers can be easily integrated onto conductive platforms (Si, Au, indium tin oxide, and so forth). Our findings open up a new class of wavelength tunable planar nanomaterials potentially suitable for on-chip integration. |
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ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl503057g |