Probing the Nature of Defects in Graphene by Raman Spectroscopy
Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ra...
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Veröffentlicht in: | Nano letters 2012-08, Vol.12 (8), p.3925-3930 |
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creator | Eckmann, Axel Felten, Alexandre Mishchenko, Artem Britnell, Liam Krupke, Ralph Novoselov, Kostya S Casiraghi, Cinzia |
description | Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D′ peak is maximum (∼13) for sp3-defects, it decreases for vacancy-like defects (∼7), and it reaches a minimum for boundaries in graphite (∼3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene. |
doi_str_mv | 10.1021/nl300901a |
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It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D′ peak is maximum (∼13) for sp3-defects, it decreases for vacancy-like defects (∼7), and it reaches a minimum for boundaries in graphite (∼3.5). 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It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D′ peak is maximum (∼13) for sp3-defects, it decreases for vacancy-like defects (∼7), and it reaches a minimum for boundaries in graphite (∼3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.</description><subject>Boundaries</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Defects</subject><subject>Disorders</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Graphene</subject><subject>Graphite</subject><subject>Materials science</subject><subject>Nanostructure</subject><subject>Physics</subject><subject>Raman spectra</subject><subject>Raman spectroscopy</subject><subject>Specific materials</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqF0M9LwzAUB_AgipvTg_-A5CLooZpfTdOTyNQpDBV_nEuavriOrq1Je9h_b8bmdhHM5QXeh_eSL0KnlFxRwuh1XXFCUkL1HhrSmJNIpinb396VGKAj7-ckIB6TQzRgLJFCKTVEN6-uycv6C3czwM-66x3gxuI7sGA6j8saT5xuZ1ADzpf4TS90jd_b0HONN027PEYHVlceTjZ1hD4f7j_Gj9H0ZfI0vp1GWgjRRUDzsN3SVBCiOYBlwgiTy4Sp1RGW8FQpqxJruMiZAFmQgvAYWCE0lYKP0MV6buua7x58ly1Kb6CqdA1N7zOaSEZilhL5PyWcqVTxhAd6uaYmfMc7sFnryoV2y4CyVbTZNtpgzzZj-3wBxVb-ZhnA-QZob3Rlna5N6XdOMibCK3dOG5_Nm97VIbg_Fv4AZ2WJyA</recordid><startdate>20120808</startdate><enddate>20120808</enddate><creator>Eckmann, Axel</creator><creator>Felten, Alexandre</creator><creator>Mishchenko, Artem</creator><creator>Britnell, Liam</creator><creator>Krupke, Ralph</creator><creator>Novoselov, Kostya S</creator><creator>Casiraghi, Cinzia</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120808</creationdate><title>Probing the Nature of Defects in Graphene by Raman Spectroscopy</title><author>Eckmann, Axel ; 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It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D′ peak is maximum (∼13) for sp3-defects, it decreases for vacancy-like defects (∼7), and it reaches a minimum for boundaries in graphite (∼3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>22764888</pmid><doi>10.1021/nl300901a</doi><tpages>6</tpages></addata></record> |
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subjects | Boundaries Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Defects Disorders Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals Exact sciences and technology Fullerenes and related materials diamonds, graphite Graphene Graphite Materials science Nanostructure Physics Raman spectra Raman spectroscopy Specific materials |
title | Probing the Nature of Defects in Graphene by Raman Spectroscopy |
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