Probing the Nature of Defects in Graphene by Raman Spectroscopy

Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ra...

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Veröffentlicht in:	Nano letters 2012-08, Vol.12 (8), p.3925-3930
Hauptverfasser:	Eckmann, Axel, Felten, Alexandre, Mishchenko, Artem, Britnell, Liam, Krupke, Ralph, Novoselov, Kostya S, Casiraghi, Cinzia
Format:	Artikel
Sprache:	eng
Schlagworte:	Boundaries Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Defects Disorders Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals Exact sciences and technology Fullerenes and related materials diamonds, graphite Graphene Graphite Materials science Nanostructure Physics Raman spectra Raman spectroscopy Specific materials
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Zusammenfassung:	Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D′ peak is maximum (∼13) for sp3-defects, it decreases for vacancy-like defects (∼7), and it reaches a minimum for boundaries in graphite (∼3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl300901a