Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode
In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electr...
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| Veröffentlicht in: | Nano letters 2013-02, Vol.13 (2), p.651-657 |
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| container_title | Nano letters |
| container_volume | 13 |
| creator | Tian, He Chen, Hong-Yu Gao, Bin Yu, Shimeng Liang, Jiale Yang, Yi Xie, Dan Kang, Jinfeng Ren, Tian-Ling Zhang, Yuegang Wong, H.-S. Philip |
| description | In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM. |
| doi_str_mv | 10.1021/nl304246d |
| format | Article |
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Philip</creator><creatorcontrib>Tian, He ; Chen, Hong-Yu ; Gao, Bin ; Yu, Shimeng ; Liang, Jiale ; Yang, Yi ; Xie, Dan ; Kang, Jinfeng ; Ren, Tian-Ling ; Zhang, Yuegang ; Wong, H.-S. Philip</creatorcontrib><description>In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl304246d</identifier><identifier>PMID: 23278753</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Electric Impedance ; Electrodes ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Graphene ; Graphite - chemistry ; Lasers ; Materials science ; Monitoring ; Monitors ; Nanotechnology ; Oxides ; Oxides - chemistry ; Oxygen - chemistry ; Physics ; Programming ; Raman spectroscopy ; Random access memory ; Specific materials ; Spectrum Analysis, Raman</subject><ispartof>Nano letters, 2013-02, Vol.13 (2), p.651-657</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a378t-7867e5f80a32e13195e38a32be747d06f2230ebca325ff889ef3cba3e0e9a253</citedby><cites>FETCH-LOGICAL-a378t-7867e5f80a32e13195e38a32be747d06f2230ebca325ff889ef3cba3e0e9a253</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl304246d$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl304246d$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27145403$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23278753$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Tian, He</creatorcontrib><creatorcontrib>Chen, Hong-Yu</creatorcontrib><creatorcontrib>Gao, Bin</creatorcontrib><creatorcontrib>Yu, Shimeng</creatorcontrib><creatorcontrib>Liang, Jiale</creatorcontrib><creatorcontrib>Yang, Yi</creatorcontrib><creatorcontrib>Xie, Dan</creatorcontrib><creatorcontrib>Kang, Jinfeng</creatorcontrib><creatorcontrib>Ren, Tian-Ling</creatorcontrib><creatorcontrib>Zhang, Yuegang</creatorcontrib><creatorcontrib>Wong, H.-S. Philip</creatorcontrib><title>Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electric Impedance</subject><subject>Electrodes</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Graphene</subject><subject>Graphite - chemistry</subject><subject>Lasers</subject><subject>Materials science</subject><subject>Monitoring</subject><subject>Monitors</subject><subject>Nanotechnology</subject><subject>Oxides</subject><subject>Oxides - chemistry</subject><subject>Oxygen - chemistry</subject><subject>Physics</subject><subject>Programming</subject><subject>Raman spectroscopy</subject><subject>Random access memory</subject><subject>Specific materials</subject><subject>Spectrum Analysis, Raman</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNqFkUFP3TAQhC1EVSj0wB9AviC1h5S1HcfOESFKkXhCAu6R46whKLGDnUDz7xvK6ysHJE472v00K80QcsDgBwPOjn0nIOd50WyRXSYFZEVZ8u2N1vkO-ZLSAwCUQsJnssMFV1pJsUumVfDtGGLr7-jV7_kOPV2FJ-zRj7Se6bXpjac3A9oxhmTDMNPg6DWmNo3tEy5334SenliLKdEV9iHO9Lkd76mh59EM9-gxu_AJ44gNPev--jS4Tz450yX8up575Pbn2e3pr-zy6vzi9OQyM0LpMVO6UCidBiM4MsFKiUIvukaVqwYKx7kArO2yks5pXaITtjYCAUvDpdgj315thxgeJ0xj1bfJYtcZj2FKFVMFBwm5ho9RrpXWhdAvrt9fUbtEkiK6aohtb-JcMahe-qg2fSzs4dp2qntsNuS_AhbgaA2YZE3novG2Tf85xXKZwxvO2FQ9hCn6Jbd3Hv4BjlSe8A</recordid><startdate>20130213</startdate><enddate>20130213</enddate><creator>Tian, He</creator><creator>Chen, Hong-Yu</creator><creator>Gao, Bin</creator><creator>Yu, Shimeng</creator><creator>Liang, Jiale</creator><creator>Yang, Yi</creator><creator>Xie, Dan</creator><creator>Kang, Jinfeng</creator><creator>Ren, Tian-Ling</creator><creator>Zhang, Yuegang</creator><creator>Wong, H.-S. Philip</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130213</creationdate><title>Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode</title><author>Tian, He ; Chen, Hong-Yu ; Gao, Bin ; Yu, Shimeng ; Liang, Jiale ; Yang, Yi ; Xie, Dan ; Kang, Jinfeng ; Ren, Tian-Ling ; Zhang, Yuegang ; Wong, H.-S. 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Philip</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2013-02-13</date><risdate>2013</risdate><volume>13</volume><issue>2</issue><spage>651</spage><epage>657</epage><pages>651-657</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>In this paper, we employed Ramen spectroscopy to monitor oxygen movement at the electrode/oxide interface by inserting single-layer graphene (SLG). Raman area mapping and single-point measurements show noticeable changes in the D-band, G-band, and 2D-band signals of the SLG during consecutive electrical programming repeated for nine cycles. In addition, the inserted SLG enables the reduction of RESET current by 22 times and programming power consumption by 47 times. Collectively, our results show that monitoring the oxygen movement by Raman spectroscopy for a resistive random access memory (RRAM) is made possible by inserting a single-layer graphene at electrode/oxide interface. This may open up an important analysis tool for investigation of switching mechanism of RRAM.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>23278753</pmid><doi>10.1021/nl304246d</doi><tpages>7</tpages></addata></record> |
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| subjects | Cross-disciplinary physics: materials science rheology Electric Impedance Electrodes Exact sciences and technology Fullerenes and related materials diamonds, graphite Graphene Graphite - chemistry Lasers Materials science Monitoring Monitors Nanotechnology Oxides Oxides - chemistry Oxygen - chemistry Physics Programming Raman spectroscopy Random access memory Specific materials Spectrum Analysis, Raman |
| title | Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode |
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