Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes
B- and N-doped carbon nanotubes (CNTs) with controlled workfunctions were successfully employed as charge trap materials for solution processable, mechanically flexible, multilevel switching resistive memory. B- and N-doping systematically controlled the charge trap level and dispersibility of CNTs...
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| Veröffentlicht in: | Nano letters 2012-05, Vol.12 (5), p.2217-2221 |
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| container_title | Nano letters |
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| creator | Hwang, Sun Kak Lee, Ju Min Kim, Seungjun Park, Ji Sun Park, Hyung Il Ahn, Chi Won Lee, Keon Jae Lee, Takhee Kim, Sang Ouk |
| description | B- and N-doped carbon nanotubes (CNTs) with controlled workfunctions were successfully employed as charge trap materials for solution processable, mechanically flexible, multilevel switching resistive memory. B- and N-doping systematically controlled the charge trap level and dispersibility of CNTs in polystyrene matrix. Consequently, doped CNT device demonstrated greatly enhanced nonvolatile memory performance (ON–OFF ratio >102, endurance cycle >102, retention time >105) compared to undoped CNT device. More significantly, the device employing both B- and N-doped CNTs with different charge trap levels exhibited multilevel resistive switching with a discrete and stable intermediate state. Charge trapping materials with different energy levels offer a novel design scheme for solution processable multilevel memory. |
| doi_str_mv | 10.1021/nl204039q |
| format | Article |
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B- and N-doping systematically controlled the charge trap level and dispersibility of CNTs in polystyrene matrix. Consequently, doped CNT device demonstrated greatly enhanced nonvolatile memory performance (ON–OFF ratio >102, endurance cycle >102, retention time >105) compared to undoped CNT device. More significantly, the device employing both B- and N-doped CNTs with different charge trap levels exhibited multilevel resistive switching with a discrete and stable intermediate state. Charge trapping materials with different energy levels offer a novel design scheme for solution processable multilevel memory.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl204039q</identifier><identifier>PMID: 22519417</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Carbon nanotubes ; Charge ; Charge materials ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Design engineering ; Devices ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Endurance ; Exact sciences and technology ; Materials science ; Multilevel ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Nanotubes ; Physics ; Polystyrene resins ; Surface double layers, schottky barriers, and work functions ; Switching</subject><ispartof>Nano letters, 2012-05, Vol.12 (5), p.2217-2221</ispartof><rights>Copyright © 2012 American Chemical Society</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a293t-ecede6fc10e8a176e661ff7a59b084a1eb87bbc37e0849950c1bb130eed20fae3</citedby><cites>FETCH-LOGICAL-a293t-ecede6fc10e8a176e661ff7a59b084a1eb87bbc37e0849950c1bb130eed20fae3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl204039q$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl204039q$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2752,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25877334$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22519417$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Hwang, Sun Kak</creatorcontrib><creatorcontrib>Lee, Ju Min</creatorcontrib><creatorcontrib>Kim, Seungjun</creatorcontrib><creatorcontrib>Park, Ji Sun</creatorcontrib><creatorcontrib>Park, Hyung Il</creatorcontrib><creatorcontrib>Ahn, Chi Won</creatorcontrib><creatorcontrib>Lee, Keon Jae</creatorcontrib><creatorcontrib>Lee, Takhee</creatorcontrib><creatorcontrib>Kim, Sang Ouk</creatorcontrib><title>Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>B- and N-doped carbon nanotubes (CNTs) with controlled workfunctions were successfully employed as charge trap materials for solution processable, mechanically flexible, multilevel switching resistive memory. B- and N-doping systematically controlled the charge trap level and dispersibility of CNTs in polystyrene matrix. Consequently, doped CNT device demonstrated greatly enhanced nonvolatile memory performance (ON–OFF ratio >102, endurance cycle >102, retention time >105) compared to undoped CNT device. More significantly, the device employing both B- and N-doped CNTs with different charge trap levels exhibited multilevel resistive switching with a discrete and stable intermediate state. Charge trapping materials with different energy levels offer a novel design scheme for solution processable multilevel memory.</description><subject>Carbon nanotubes</subject><subject>Charge</subject><subject>Charge materials</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Design engineering</subject><subject>Devices</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Endurance</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Multilevel</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanotubes</subject><subject>Physics</subject><subject>Polystyrene resins</subject><subject>Surface double layers, schottky barriers, and work functions</subject><subject>Switching</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqF0E9P2zAYBnBrAg3odtgXQL4gwSHMf5I4PkJZ2SRg0sTO2WvnDU3lxsVO2Pj2GLVrL0ic_Nr-6Xmlh5AvnJ1zJvjX3gmWM6kfP5BDXkiWlVqLve1c5QfkKMYFY0zLgn0kB0IUXOdcHZI_M4f_OuOQ3o5u6Bw-oaO_MHZx6J7SIy59eKZ_u2FOp74fgncOGzqdQ3hAeh9gRS8zCn1D77Irv3r9gmB8T--g98NoMH4i-y24iJ8354T8nn27n37Pbn5e_5he3GQgtBwytNhg2VrOsAKuSixL3rYKCm1YlQNHUyljrFSYrloXzHJjuGSIjWAtoJyQ03XuKvjHEeNQL7to0Tno0Y-xTpmpJF1y-T5lXAimVFUleramNvgYA7b1KnRLCM8J1a_d19vukz3exI5mic1W_i87gZMNgGjBtQF628WdKyqlpMx3DmysF34MfSrujYUv7WiXcg</recordid><startdate>20120509</startdate><enddate>20120509</enddate><creator>Hwang, Sun Kak</creator><creator>Lee, Ju Min</creator><creator>Kim, Seungjun</creator><creator>Park, Ji Sun</creator><creator>Park, Hyung Il</creator><creator>Ahn, Chi Won</creator><creator>Lee, Keon Jae</creator><creator>Lee, Takhee</creator><creator>Kim, Sang Ouk</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120509</creationdate><title>Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes</title><author>Hwang, Sun Kak ; Lee, Ju Min ; Kim, Seungjun ; Park, Ji Sun ; Park, Hyung Il ; Ahn, Chi Won ; Lee, Keon Jae ; Lee, Takhee ; Kim, Sang Ouk</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a293t-ecede6fc10e8a176e661ff7a59b084a1eb87bbc37e0849950c1bb130eed20fae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Carbon nanotubes</topic><topic>Charge</topic><topic>Charge materials</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Design engineering</topic><topic>Devices</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Endurance</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Multilevel</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanotubes</topic><topic>Physics</topic><topic>Polystyrene resins</topic><topic>Surface double layers, schottky barriers, and work functions</topic><topic>Switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hwang, Sun Kak</creatorcontrib><creatorcontrib>Lee, Ju Min</creatorcontrib><creatorcontrib>Kim, Seungjun</creatorcontrib><creatorcontrib>Park, Ji Sun</creatorcontrib><creatorcontrib>Park, Hyung Il</creatorcontrib><creatorcontrib>Ahn, Chi Won</creatorcontrib><creatorcontrib>Lee, Keon Jae</creatorcontrib><creatorcontrib>Lee, Takhee</creatorcontrib><creatorcontrib>Kim, Sang Ouk</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hwang, Sun Kak</au><au>Lee, Ju Min</au><au>Kim, Seungjun</au><au>Park, Ji Sun</au><au>Park, Hyung Il</au><au>Ahn, Chi Won</au><au>Lee, Keon Jae</au><au>Lee, Takhee</au><au>Kim, Sang Ouk</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2012-05-09</date><risdate>2012</risdate><volume>12</volume><issue>5</issue><spage>2217</spage><epage>2221</epage><pages>2217-2221</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>B- and N-doped carbon nanotubes (CNTs) with controlled workfunctions were successfully employed as charge trap materials for solution processable, mechanically flexible, multilevel switching resistive memory. B- and N-doping systematically controlled the charge trap level and dispersibility of CNTs in polystyrene matrix. Consequently, doped CNT device demonstrated greatly enhanced nonvolatile memory performance (ON–OFF ratio >102, endurance cycle >102, retention time >105) compared to undoped CNT device. More significantly, the device employing both B- and N-doped CNTs with different charge trap levels exhibited multilevel resistive switching with a discrete and stable intermediate state. Charge trapping materials with different energy levels offer a novel design scheme for solution processable multilevel memory.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>22519417</pmid><doi>10.1021/nl204039q</doi><tpages>5</tpages></addata></record> |
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| subjects | Carbon nanotubes Charge Charge materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Design engineering Devices Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Endurance Exact sciences and technology Materials science Multilevel Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanotubes Physics Polystyrene resins Surface double layers, schottky barriers, and work functions Switching |
| title | Flexible Multilevel Resistive Memory with Controlled Charge Trap B- and N-Doped Carbon Nanotubes |
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