Low-Resistivity 10 nm Diameter Magnetic Sensors

Low-Resistivity 10 nm Diameter Magnetic Sensors

Resistivities of 5.4 μΩ·cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors wer...

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Veröffentlicht in:Nano letters 2012-08, Vol.12 (8), p.4102-4109
Hauptverfasser: Maqableh, Mazin M, Huang, Xiaobo, Sung, Sang-Yeob, Reddy, K. Sai Madhukar, Norby, Gregory, Victora, R. H, Stadler, Bethanie J. H
Format: Artikel
Sprache:eng
Schlagworte:
Chemical synthesis methods
Cobalt
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electrical resistivity
Electromigration
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Heating
Magnetic properties and materials
Magnetic properties of nanostructures
Materials science
Methods of nanofabrication
Nanostructure
Physics
Power consumption
Sensors
Tunnel junctions
Wire
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Zusammenfassung:Resistivities of 5.4 μΩ·cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20–30 Ω and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl301610z