Quantized Conductance in an InSb Nanowire

Ballistic one-dimensional transport in semiconductor nanowires plays a central role in creating topological and helical states. The hallmark of such one-dimensional transport is conductance quantization. Here we show conductance quantization in InSb nanowires at nonzero magnetic fields. Conductance...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nano letters 2013-02, Vol.13 (2), p.387-391
Hauptverfasser: van Weperen, Ilse, Plissard, Sébastien R, Bakkers, Erik P. A. M, Frolov, Sergey M, Kouwenhoven, Leo P
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Ballistic one-dimensional transport in semiconductor nanowires plays a central role in creating topological and helical states. The hallmark of such one-dimensional transport is conductance quantization. Here we show conductance quantization in InSb nanowires at nonzero magnetic fields. Conductance plateaus are studied as a function of source-drain bias and magnetic field, enabling extraction of the Landé g factor and the subband spacing.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl3035256