Quantized Conductance in an InSb Nanowire
Ballistic one-dimensional transport in semiconductor nanowires plays a central role in creating topological and helical states. The hallmark of such one-dimensional transport is conductance quantization. Here we show conductance quantization in InSb nanowires at nonzero magnetic fields. Conductance...
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Veröffentlicht in: | Nano letters 2013-02, Vol.13 (2), p.387-391 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Ballistic one-dimensional transport in semiconductor nanowires plays a central role in creating topological and helical states. The hallmark of such one-dimensional transport is conductance quantization. Here we show conductance quantization in InSb nanowires at nonzero magnetic fields. Conductance plateaus are studied as a function of source-drain bias and magnetic field, enabling extraction of the Landé g factor and the subband spacing. |
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ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl3035256 |