Ultrasensitive Phototransistors Based on Few-Layered HfS2

Ultrasensitive Phototransistors Based on Few-Layered HfS2

An ultrathin HfS2‐based ultrasensitive phototransistor is systematically studied. Au‐contacted HfS2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 107, ultrahigh photoresponsivity over 890 A W−1, and photogain over 2300. Moreover, the response time i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2015-12, Vol.27 (47), p.7881-7887
Hauptverfasser: Xu, Kai, Wang, Zhenxing, Wang, Feng, Huang, Yun, Wang, Fengmei, Yin, Lei, Jiang, Chao, He, Jun
Format: Artikel
Sprache:eng
Schlagworte:
flake thickness
HfS2
metal contacts
phototransistors
responsivity
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An ultrathin HfS2‐based ultrasensitive phototransistor is systematically studied. Au‐contacted HfS2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 107, ultrahigh photoresponsivity over 890 A W−1, and photogain over 2300. Moreover, the response time is strongly dependent on the back‐gate voltage and shows a reverse trend for Au and Cr metals.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201503864