Spontaneous emission of semiconductor quantum dots in inverse opal SiO2 photonic crystals at different temperatures

The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Final...

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Veröffentlicht in:Luminescence (Chichester, England) England), 2016-02, Vol.31 (1), p.4-7
Hauptverfasser: Yang, Peng, Yang, Yingshu, Wang, Yinghui, Gao, Jiechao, Sui, Ning, Chi, Xiaochun, Zou, Lu, Zhang, Han-Zhuang
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container_issue 1
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container_title Luminescence (Chichester, England)
container_volume 31
creator Yang, Peng
Yang, Yingshu
Wang, Yinghui
Gao, Jiechao
Sui, Ning
Chi, Xiaochun
Zou, Lu
Zhang, Han-Zhuang
description The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs. Copyright © 2015 John Wiley & Sons, Ltd.
doi_str_mv 10.1002/bio.3000
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subjects Cadmium Compounds - chemistry
Crystallization
Luminescence
Optics and Photonics
photoluminescence
photonic crystals
Photons
Quantum Dots
Selenium Compounds - chemistry
Semiconductors
Silicon Dioxide - chemistry
Temperature
title Spontaneous emission of semiconductor quantum dots in inverse opal SiO2 photonic crystals at different temperatures
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