Spontaneous emission of semiconductor quantum dots in inverse opal SiO2 photonic crystals at different temperatures

The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Final...

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Veröffentlicht in:	Luminescence (Chichester, England) England), 2016-02, Vol.31 (1), p.4-7
Hauptverfasser:	Yang, Peng, Yang, Yingshu, Wang, Yinghui, Gao, Jiechao, Sui, Ning, Chi, Xiaochun, Zou, Lu, Zhang, Han-Zhuang
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium Compounds - chemistry Crystallization Luminescence Optics and Photonics photoluminescence photonic crystals Photons Quantum Dots Selenium Compounds - chemistry Semiconductors Silicon Dioxide - chemistry Temperature
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Zusammenfassung:	The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs. Copyright © 2015 John Wiley & Sons, Ltd.
ISSN:	1522-7235 1522-7243
DOI:	10.1002/bio.3000