Radio-frequency transistors from millimeter-scale graphene domains
Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF fie...
Gespeichert in:
| Veröffentlicht in: | Chinese physics B 2014-11, Vol.23 (11), p.470-475 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 475 |
|---|---|
| container_issue | 11 |
| container_start_page | 470 |
| container_title | Chinese physics B |
| container_volume | 23 |
| creator | 魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴 |
| description | Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits. |
| doi_str_mv | 10.1088/1674-1056/23/11/117201 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1753551931</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>662812619</cqvip_id><sourcerecordid>1753551931</sourcerecordid><originalsourceid>FETCH-LOGICAL-c381t-ffd7cec38cb71334efb0253d89b2e5810ea70e660368a9e8628ac1d68393a1553</originalsourceid><addsrcrecordid>eNo9kM1qwzAQhEVpoWnaVyimp15ca7WRLB_b0D8IFEp7Foq8TlRsK5GcQ96-DgmBhdnDzDB8jN0DfwKudQGqnOXApSoEFgDjlYLDBZsILnWOGmeXbHI2XbOblP44V8AFTtjLt619yJtI2x31bp8N0fbJpyHElDUxdFnn29Z3NFDMk7MtZatoN2vqKatDZ32fbtlVY9tEdyedst-315_5R774ev-cPy9yhxqGvGnq0tH4u2UJiDNqllxIrHW1FCQ1cLIlJ6U4Km0r0kpo66BWGiu0ICVO2eOxdxPDODYNpvPJUdvansIuGSglSgkVwmhVR6uLIaVIjdlE39m4N8DNAZo58DAHHkagATBHaGPw4RRch3619f3qnFTjIBBq7P8HV9FrJA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1753551931</pqid></control><display><type>article</type><title>Radio-frequency transistors from millimeter-scale graphene domains</title><source>IOP Publishing Journals</source><creator>魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴</creator><creatorcontrib>魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴</creatorcontrib><description>Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>EISSN: 1741-4199</identifier><identifier>DOI: 10.1088/1674-1056/23/11/117201</identifier><language>eng</language><subject>Circuits ; Density ; Electronics ; Graphene ; Oscillations ; RF晶体管 ; Semiconductor devices ; Silicon substrates ; Threshold currents ; Transistors ; 场效应晶体管 ; 射频晶体管 ; 截止频率 ; 毫米级 ; 电子应用 ; 石墨 ; 阈值电流密度</subject><ispartof>Chinese physics B, 2014-11, Vol.23 (11), p.470-475</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-ffd7cec38cb71334efb0253d89b2e5810ea70e660368a9e8628ac1d68393a1553</citedby><cites>FETCH-LOGICAL-c381t-ffd7cec38cb71334efb0253d89b2e5810ea70e660368a9e8628ac1d68393a1553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴</creatorcontrib><title>Radio-frequency transistors from millimeter-scale graphene domains</title><title>Chinese physics B</title><addtitle>Chinese Physics</addtitle><description>Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.</description><subject>Circuits</subject><subject>Density</subject><subject>Electronics</subject><subject>Graphene</subject><subject>Oscillations</subject><subject>RF晶体管</subject><subject>Semiconductor devices</subject><subject>Silicon substrates</subject><subject>Threshold currents</subject><subject>Transistors</subject><subject>场效应晶体管</subject><subject>射频晶体管</subject><subject>截止频率</subject><subject>毫米级</subject><subject>电子应用</subject><subject>石墨</subject><subject>阈值电流密度</subject><issn>1674-1056</issn><issn>2058-3834</issn><issn>1741-4199</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9kM1qwzAQhEVpoWnaVyimp15ca7WRLB_b0D8IFEp7Foq8TlRsK5GcQ96-DgmBhdnDzDB8jN0DfwKudQGqnOXApSoEFgDjlYLDBZsILnWOGmeXbHI2XbOblP44V8AFTtjLt619yJtI2x31bp8N0fbJpyHElDUxdFnn29Z3NFDMk7MtZatoN2vqKatDZ32fbtlVY9tEdyedst-315_5R774ev-cPy9yhxqGvGnq0tH4u2UJiDNqllxIrHW1FCQ1cLIlJ6U4Km0r0kpo66BWGiu0ICVO2eOxdxPDODYNpvPJUdvansIuGSglSgkVwmhVR6uLIaVIjdlE39m4N8DNAZo58DAHHkagATBHaGPw4RRch3619f3qnFTjIBBq7P8HV9FrJA</recordid><startdate>20141101</startdate><enddate>20141101</enddate><creator>魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20141101</creationdate><title>Radio-frequency transistors from millimeter-scale graphene domains</title><author>魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-ffd7cec38cb71334efb0253d89b2e5810ea70e660368a9e8628ac1d68393a1553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Circuits</topic><topic>Density</topic><topic>Electronics</topic><topic>Graphene</topic><topic>Oscillations</topic><topic>RF晶体管</topic><topic>Semiconductor devices</topic><topic>Silicon substrates</topic><topic>Threshold currents</topic><topic>Transistors</topic><topic>场效应晶体管</topic><topic>射频晶体管</topic><topic>截止频率</topic><topic>毫米级</topic><topic>电子应用</topic><topic>石墨</topic><topic>阈值电流密度</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Radio-frequency transistors from millimeter-scale graphene domains</atitle><jtitle>Chinese physics B</jtitle><addtitle>Chinese Physics</addtitle><date>2014-11-01</date><risdate>2014</risdate><volume>23</volume><issue>11</issue><spage>470</spage><epage>475</epage><pages>470-475</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><eissn>1741-4199</eissn><abstract>Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.</abstract><doi>10.1088/1674-1056/23/11/117201</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-1056 |
| ispartof | Chinese physics B, 2014-11, Vol.23 (11), p.470-475 |
| issn | 1674-1056 2058-3834 1741-4199 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1753551931 |
| source | IOP Publishing Journals |
| subjects | Circuits Density Electronics Graphene Oscillations RF晶体管 Semiconductor devices Silicon substrates Threshold currents Transistors 场效应晶体管 射频晶体管 截止频率 毫米级 电子应用 石墨 阈值电流密度 |
| title | Radio-frequency transistors from millimeter-scale graphene domains |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T23%3A26%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Radio-frequency%20transistors%20from%20millimeter-scale%20graphene%20domains&rft.jtitle=Chinese%20physics%20B&rft.au=%E9%AD%8F%E5%AD%90%E9%92%A7%20%E5%82%85%E4%BA%91%E4%B9%89%20%E5%88%98%E7%AB%9E%E5%8D%9A%20%E7%8E%8B%E7%B4%AB%E4%B8%9C%20%E8%B4%BE%E8%B6%8A%E8%BE%89%20%E9%83%AD%E5%89%91%20%E4%BB%BB%E9%BB%8E%E6%98%8E%20%E9%99%88%E8%BF%9C%E5%AF%8C%20%E5%BC%A0%E9%85%A3%20%E9%BB%84%E5%A6%82%20%E5%BC%A0%E5%85%B4&rft.date=2014-11-01&rft.volume=23&rft.issue=11&rft.spage=470&rft.epage=475&rft.pages=470-475&rft.issn=1674-1056&rft.eissn=2058-3834&rft_id=info:doi/10.1088/1674-1056/23/11/117201&rft_dat=%3Cproquest_cross%3E1753551931%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1753551931&rft_id=info:pmid/&rft_cqvip_id=662812619&rfr_iscdi=true |