Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN
Electrically manipulating electron spins based on Rashba spin–orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an e...
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| Veröffentlicht in: | Nano letters 2013-05, Vol.13 (5), p.2024-2029 |
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| container_issue | 5 |
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| container_title | Nano letters |
| container_volume | 13 |
| creator | Yin, Chunming Yuan, Hongtao Wang, Xinqiang Liu, Shitao Zhang, Shan Tang, Ning Xu, Fujun Chen, Zhuoyu Shimotani, Hidekazu Iwasa, Yoshihiro Chen, Yonghai Ge, Weikun Shen, Bo |
| description | Electrically manipulating electron spins based on Rashba spin–orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices. |
| doi_str_mv | 10.1021/nl400153p |
| format | Article |
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Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl400153p</identifier><identifier>PMID: 23614498</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; Electric fields ; Electron spin ; Electronics ; Exact sciences and technology ; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics ; Molecular electronics, nanoelectronics ; Polarization ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Spintronics ; Splitting ; Transistors ; Two dimensional</subject><ispartof>Nano letters, 2013-05, Vol.13 (5), p.2024-2029</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a378t-7bd02d06a388bb8c67790d6cbf3ea61cc071e5d95402d3d0288cfc3c42634bd53</citedby><cites>FETCH-LOGICAL-a378t-7bd02d06a388bb8c67790d6cbf3ea61cc071e5d95402d3d0288cfc3c42634bd53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl400153p$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl400153p$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27439302$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23614498$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Yin, Chunming</creatorcontrib><creatorcontrib>Yuan, Hongtao</creatorcontrib><creatorcontrib>Wang, Xinqiang</creatorcontrib><creatorcontrib>Liu, Shitao</creatorcontrib><creatorcontrib>Zhang, Shan</creatorcontrib><creatorcontrib>Tang, Ning</creatorcontrib><creatorcontrib>Xu, Fujun</creatorcontrib><creatorcontrib>Chen, Zhuoyu</creatorcontrib><creatorcontrib>Shimotani, Hidekazu</creatorcontrib><creatorcontrib>Iwasa, Yoshihiro</creatorcontrib><creatorcontrib>Chen, Yonghai</creatorcontrib><creatorcontrib>Ge, Weikun</creatorcontrib><creatorcontrib>Shen, Bo</creatorcontrib><title>Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>Electrically manipulating electron spins based on Rashba spin–orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.</description><subject>Applied sciences</subject><subject>Electric fields</subject><subject>Electron spin</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Polarization</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Spintronics</subject><subject>Splitting</subject><subject>Transistors</subject><subject>Two dimensional</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqF0EFLwzAUB_AgipvTg19AehH0UH1p0jQ96pw6GHrYPHkoaZpqRtbWpEX27c1Y3S6Cl_ce5Pde4I_QOYYbDBG-rQwFwDFpDtDQNwhZmkaHu5nTATpxbgkAKYnhGA0iwjClKR-i90VXidyoYN7ZUkgVTIySra2rYN7oTTG6bXX1EXzr9rN_1DJ4qDu_FM7EWtlgYUXltGtr64J74VQR-PVp9XKKjkphnDrr-wi9PU4W4-dw9vo0Hd_NQkES3oZJXkBUABOE8zznkiVJCgWTeUmUYFhKSLCKizSmnhFvOZelJJJGjNC8iMkIXW3vNrb-6pRrs5V2UhkjKlV3LsNJTOKIUgb_U0LTBGjMiafXWypt7ZxVZdZYvRJ2nWHINrFnu9i9vejPdvlKFTv5m7MHlz0QTgpT-sSkdnuXUJISiPZOSJct685WPrg_PvwBFDOVEg</recordid><startdate>20130508</startdate><enddate>20130508</enddate><creator>Yin, Chunming</creator><creator>Yuan, Hongtao</creator><creator>Wang, Xinqiang</creator><creator>Liu, Shitao</creator><creator>Zhang, Shan</creator><creator>Tang, Ning</creator><creator>Xu, Fujun</creator><creator>Chen, Zhuoyu</creator><creator>Shimotani, Hidekazu</creator><creator>Iwasa, Yoshihiro</creator><creator>Chen, Yonghai</creator><creator>Ge, Weikun</creator><creator>Shen, Bo</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130508</creationdate><title>Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN</title><author>Yin, Chunming ; Yuan, Hongtao ; Wang, Xinqiang ; Liu, Shitao ; Zhang, Shan ; Tang, Ning ; Xu, Fujun ; Chen, Zhuoyu ; Shimotani, Hidekazu ; Iwasa, Yoshihiro ; Chen, Yonghai ; Ge, Weikun ; Shen, Bo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a378t-7bd02d06a388bb8c67790d6cbf3ea61cc071e5d95402d3d0288cfc3c42634bd53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Electric fields</topic><topic>Electron spin</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics</topic><topic>Molecular electronics, nanoelectronics</topic><topic>Polarization</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Spintronics</topic><topic>Splitting</topic><topic>Transistors</topic><topic>Two dimensional</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yin, Chunming</creatorcontrib><creatorcontrib>Yuan, Hongtao</creatorcontrib><creatorcontrib>Wang, Xinqiang</creatorcontrib><creatorcontrib>Liu, Shitao</creatorcontrib><creatorcontrib>Zhang, Shan</creatorcontrib><creatorcontrib>Tang, Ning</creatorcontrib><creatorcontrib>Xu, Fujun</creatorcontrib><creatorcontrib>Chen, Zhuoyu</creatorcontrib><creatorcontrib>Shimotani, Hidekazu</creatorcontrib><creatorcontrib>Iwasa, Yoshihiro</creatorcontrib><creatorcontrib>Chen, Yonghai</creatorcontrib><creatorcontrib>Ge, Weikun</creatorcontrib><creatorcontrib>Shen, Bo</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yin, Chunming</au><au>Yuan, Hongtao</au><au>Wang, Xinqiang</au><au>Liu, Shitao</au><au>Zhang, Shan</au><au>Tang, Ning</au><au>Xu, Fujun</au><au>Chen, Zhuoyu</au><au>Shimotani, Hidekazu</au><au>Iwasa, Yoshihiro</au><au>Chen, Yonghai</au><au>Ge, Weikun</au><au>Shen, Bo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2013-05-08</date><risdate>2013</risdate><volume>13</volume><issue>5</issue><spage>2024</spage><epage>2029</epage><pages>2024-2029</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Electrically manipulating electron spins based on Rashba spin–orbit coupling (SOC) is a key pathway for applications of spintronics and spin-based quantum computation. Two-dimensional electron systems (2DESs) offer a particularly important SOC platform, where spin polarization can be tuned with an electric field perpendicular to the 2DES. Here, by measuring the tunable circular photogalvanic effect (CPGE), we present a room-temperature electric-field-modulated spin splitting of surface electrons on InN epitaxial thin films that is a good candidate to realize spin injection. The surface band bending and resulting CPGE current are successfully modulated by ionic liquid gating within an electric double-layer transistor configuration. The clear gate voltage dependence of CPGE current indicates that the spin splitting of the surface electron accumulation layer is effectively tuned, providing a way to modulate the injected spin polarization in potential spintronic devices.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>23614498</pmid><doi>10.1021/nl400153p</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Electric fields Electron spin Electronics Exact sciences and technology Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Molecular electronics, nanoelectronics Polarization Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spintronics Splitting Transistors Two dimensional |
| title | Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN |
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