Improved GZO Thin Film Properties with SiO sub(x) Buffer Layer by Atmospheric Pressure Plasma Deposition

The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiO sub(x) could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiO sub(x) de...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Key engineering materials 2014-08, Vol.625, p.196-200
Hauptverfasser: Yang, Kuo Hui, Ho, Po Ching, Lin, Je Wei, Chou, Ta Hsin, Chang, Kow Ming
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 200
container_issue
container_start_page 196
container_title Key engineering materials
container_volume 625
creator Yang, Kuo Hui
Ho, Po Ching
Lin, Je Wei
Chou, Ta Hsin
Chang, Kow Ming
description The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiO sub(x) could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiO sub(x) deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm super(2). GZO thin film with SiO sub(x) buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiO sub(x)/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.
doi_str_mv 10.4028/www.scientific.net/KEM.625.196
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1753518623</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1753518623</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_17535186233</originalsourceid><addsrcrecordid>eNqVjctOwzAQRS0EEuXxD7NCZZHUjombLHm0gAC1El2xqdIwUQYlcfDYDf17suAH2Nx7FvfoCnGlZHwjk2w2DEPMJWHnqaIy7tDPXhZvsUnSWOXmSEyUMUmUz_P0eGSpdJRniTkVZ8xfUmqVqXQi6ue2d3aPn_D4sYJNTR0sqWlh7WyPzhMyDORreKcVcNhNf67hLlQVOngtDmPuDnDrW8t9jY7KUUPm4BDWTcFtAQ_YWyZPtrsQJ1XRMF7-9bmYLheb-6dovP8OyH7bEpfYNEWHNvBWzVOdqswkWv9j-gvYvVfA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1753518623</pqid></control><display><type>article</type><title>Improved GZO Thin Film Properties with SiO sub(x) Buffer Layer by Atmospheric Pressure Plasma Deposition</title><source>Scientific.net Journals</source><creator>Yang, Kuo Hui ; Ho, Po Ching ; Lin, Je Wei ; Chou, Ta Hsin ; Chang, Kow Ming</creator><creatorcontrib>Yang, Kuo Hui ; Ho, Po Ching ; Lin, Je Wei ; Chou, Ta Hsin ; Chang, Kow Ming</creatorcontrib><description>The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiO sub(x) could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiO sub(x) deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm super(2). GZO thin film with SiO sub(x) buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiO sub(x)/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.</description><identifier>ISSN: 1013-9826</identifier><identifier>EISSN: 1662-9795</identifier><identifier>DOI: 10.4028/www.scientific.net/KEM.625.196</identifier><language>eng</language><subject>Atmospheric pressure ; Barometric pressure ; Buffer layers ; Deposition ; Glass ; Jets ; Oxides ; Silicon dioxide ; Thin films</subject><ispartof>Key engineering materials, 2014-08, Vol.625, p.196-200</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Yang, Kuo Hui</creatorcontrib><creatorcontrib>Ho, Po Ching</creatorcontrib><creatorcontrib>Lin, Je Wei</creatorcontrib><creatorcontrib>Chou, Ta Hsin</creatorcontrib><creatorcontrib>Chang, Kow Ming</creatorcontrib><title>Improved GZO Thin Film Properties with SiO sub(x) Buffer Layer by Atmospheric Pressure Plasma Deposition</title><title>Key engineering materials</title><description>The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiO sub(x) could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiO sub(x) deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm super(2). GZO thin film with SiO sub(x) buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiO sub(x)/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.</description><subject>Atmospheric pressure</subject><subject>Barometric pressure</subject><subject>Buffer layers</subject><subject>Deposition</subject><subject>Glass</subject><subject>Jets</subject><subject>Oxides</subject><subject>Silicon dioxide</subject><subject>Thin films</subject><issn>1013-9826</issn><issn>1662-9795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqVjctOwzAQRS0EEuXxD7NCZZHUjombLHm0gAC1El2xqdIwUQYlcfDYDf17suAH2Nx7FvfoCnGlZHwjk2w2DEPMJWHnqaIy7tDPXhZvsUnSWOXmSEyUMUmUz_P0eGSpdJRniTkVZ8xfUmqVqXQi6ue2d3aPn_D4sYJNTR0sqWlh7WyPzhMyDORreKcVcNhNf67hLlQVOngtDmPuDnDrW8t9jY7KUUPm4BDWTcFtAQ_YWyZPtrsQJ1XRMF7-9bmYLheb-6dovP8OyH7bEpfYNEWHNvBWzVOdqswkWv9j-gvYvVfA</recordid><startdate>20140801</startdate><enddate>20140801</enddate><creator>Yang, Kuo Hui</creator><creator>Ho, Po Ching</creator><creator>Lin, Je Wei</creator><creator>Chou, Ta Hsin</creator><creator>Chang, Kow Ming</creator><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140801</creationdate><title>Improved GZO Thin Film Properties with SiO sub(x) Buffer Layer by Atmospheric Pressure Plasma Deposition</title><author>Yang, Kuo Hui ; Ho, Po Ching ; Lin, Je Wei ; Chou, Ta Hsin ; Chang, Kow Ming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_17535186233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Atmospheric pressure</topic><topic>Barometric pressure</topic><topic>Buffer layers</topic><topic>Deposition</topic><topic>Glass</topic><topic>Jets</topic><topic>Oxides</topic><topic>Silicon dioxide</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Kuo Hui</creatorcontrib><creatorcontrib>Ho, Po Ching</creatorcontrib><creatorcontrib>Lin, Je Wei</creatorcontrib><creatorcontrib>Chou, Ta Hsin</creatorcontrib><creatorcontrib>Chang, Kow Ming</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Key engineering materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Kuo Hui</au><au>Ho, Po Ching</au><au>Lin, Je Wei</au><au>Chou, Ta Hsin</au><au>Chang, Kow Ming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved GZO Thin Film Properties with SiO sub(x) Buffer Layer by Atmospheric Pressure Plasma Deposition</atitle><jtitle>Key engineering materials</jtitle><date>2014-08-01</date><risdate>2014</risdate><volume>625</volume><spage>196</spage><epage>200</epage><pages>196-200</pages><issn>1013-9826</issn><eissn>1662-9795</eissn><abstract>The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiO sub(x) could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiO sub(x) deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm super(2). GZO thin film with SiO sub(x) buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiO sub(x)/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.</abstract><doi>10.4028/www.scientific.net/KEM.625.196</doi></addata></record>
fulltext fulltext
identifier ISSN: 1013-9826
ispartof Key engineering materials, 2014-08, Vol.625, p.196-200
issn 1013-9826
1662-9795
language eng
recordid cdi_proquest_miscellaneous_1753518623
source Scientific.net Journals
subjects Atmospheric pressure
Barometric pressure
Buffer layers
Deposition
Glass
Jets
Oxides
Silicon dioxide
Thin films
title Improved GZO Thin Film Properties with SiO sub(x) Buffer Layer by Atmospheric Pressure Plasma Deposition
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T22%3A25%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improved%20GZO%20Thin%20Film%20Properties%20with%20SiO%20sub(x)%20Buffer%20Layer%20by%20Atmospheric%20Pressure%20Plasma%20Deposition&rft.jtitle=Key%20engineering%20materials&rft.au=Yang,%20Kuo%20Hui&rft.date=2014-08-01&rft.volume=625&rft.spage=196&rft.epage=200&rft.pages=196-200&rft.issn=1013-9826&rft.eissn=1662-9795&rft_id=info:doi/10.4028/www.scientific.net/KEM.625.196&rft_dat=%3Cproquest%3E1753518623%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1753518623&rft_id=info:pmid/&rfr_iscdi=true