Improved GZO Thin Film Properties with SiO sub(x) Buffer Layer by Atmospheric Pressure Plasma Deposition

The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiO sub(x) could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiO sub(x) deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm super(2). GZO thin film with SiO sub(x) buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiO sub(x)/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.