Strain analysis of free-standing strained silicon-on-insulator nanomembrane

Based on the ultra-thin strained silicon-on-insulator（s SOI） technology, by creatively using a hydrofluoric acid（HF）vapor corrosion system to dry etch the Si O2 layer, a large area of suspended strained silicon（s Si） nanomembrane with uniform strain distribution is fabricated. The strain state in the implemented nanomembrane is comprehensively analyzed by using an UV-Raman spectrometer with different laser powers. The results show that the inherent strain is preserved while there are artificial Raman shifts induced by the heat effect, which is proportional to the laser power. The suspended s SOI nanomembrane will be an important material for future novel high-performance devices.