Ultrafast Electron Trapping at the Surface of Semiconductor Nanocrystals: Excitonic and Biexcitonic Processes

Aging of semiconductor nanocrystals (NCs) is well-known to attenuate the spontaneous photoluminescence from the band edge excitonic state by introduction of nonradiative trap states formed at the NC surface. In order to explore charge carrier dynamics dictated by the surface of the NC, femtosecond p...

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Veröffentlicht in:The journal of physical chemistry. B 2013-04, Vol.117 (16), p.4412-4421
Hauptverfasser: Saari, Jonathan I, Dias, Eva A, Reifsnyder, Danielle, Krause, Michael M, Walsh, Brenna R, Murray, Christopher B, Kambhampati, Patanjali
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Sprache:eng
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Zusammenfassung:Aging of semiconductor nanocrystals (NCs) is well-known to attenuate the spontaneous photoluminescence from the band edge excitonic state by introduction of nonradiative trap states formed at the NC surface. In order to explore charge carrier dynamics dictated by the surface of the NC, femtosecond pump/probe spectroscopic experiments are performed on freshly synthesized and aged CdTe NCs. These experiments reveal fast electron trapping for aged CdTe NCs from the single excitonic state (X). Pump fluence dependence with excitonic state-resolved optical pumping enables directly populating the biexcitonic state (XX), which produces further accelerated electron trapping rates. This increase in electron trapping rate triggers coherent acoustic phonons by virtue of the ultrafast impulsive time scale of the surface trapping process. The observed trapping rates are discussed in terms of electron transfer theory.
ISSN:1520-6106
1520-5207
DOI:10.1021/jp307668g