Optical Properties of Cu2ZnSnSe4 Nanocrystalline Thin Films for Photovoltaic Devices

Presents a study of optical properties from transmittance measurements as a function of wavelength to CZTSe thin films (Cu2ZnSnSe4) using Bhattacharyya model and basic elements from the Swanepoel theory. The optical constants such as the absorption coefficient (α), the refractive index (n), the extinction coefficient (k) and physical properties such as gap (Eg), the real and imaginary part of the dielectric function (ε1 and ε2) and the film thickness (d), were determined. Gap values between 1.2 and 1.7 eV were obtained for compound when the mass (MX) of ZnSe was varied during the deposition stage. Inhomogeneity and high surface roughness were observed by SEM measurements for all samples. Size grain varying between 458.16 and 630.28 nm were obtained while the ZnSe binary mass varied from 0.171 to 0.153 g. Refractive index and extinction coefficient of Cu2ZnSnSe4 films were obtained for λ = 800 nm. A decrease of ε1 and ε2 was observed as the wavelength increases; it is associated with the presence of binary phases in the XRD patterns.