Sensitivity of thin-film bulk acoustic resonators (FBAR) to localized mechanical forces

We report on the sensitivity of thin-film bulk acoustic resonators (FBARs) to localized contact mechanical forces, their design for high sensitivity and the performance under different forcing conditions and mechanisms. Cantilever and membrane structures are the examples chosen for structure and process flow design, finite element modeling and experimental characterization. To leverage on the high sensitivity of FBAR devices at the 2 GHz radio frequency, we carried out electrical bulk acoustic wave excitation and readout of the first longitudinal acoustic mode. Experiments to extract actual sensitivities included atomic force microscopy-driven force excitation, nanoindentation and manual force loading. A force sensitivity function with extracted values S (MHz N−1) from 50 to 270 MHz N−1 shows its dependence on the thin-film stack configuration, the extent of force which determines the linear regime and the spatial location of the force loading source. The discussion provides a force range and sensitivity benchmarking, possible manufacturing and application scenarios, and design guidelines for future integrated devices.