Paper No S12.2: High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
Indium oxide film has been deposited by plasma‐enhanced atomic layer deposition and adopted as channel materials for high‐mobility thin‐film transistors. The resultant device fabricated at temperature of 200° C showed a field‐effect mobility of as high as 31 cm2/V s in linear region.
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| Veröffentlicht in: | SID International Symposium Digest of technical papers 2015-09, Vol.46 (S1), p.52-52 |
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| container_issue | S1 |
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| container_title | SID International Symposium Digest of technical papers |
| container_volume | 46 |
| creator | Yeom, H. I. Ko, J. B. Hwang, C.-S. Cho, S. Park, S.-H. K. |
| description | Indium oxide film has been deposited by plasma‐enhanced atomic layer deposition and adopted as channel materials for high‐mobility thin‐film transistors. The resultant device fabricated at temperature of 200°
C showed a field‐effect mobility of as high as 31 cm2/V s in linear region. |
| doi_str_mv | 10.1002/sdtp.10529 |
| format | Article |
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| ispartof | SID International Symposium Digest of technical papers, 2015-09, Vol.46 (S1), p.52-52 |
| issn | 0097-966X 2168-0159 |
| language | eng |
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| source | Wiley Online Library All Journals |
| subjects | Channels Deposition Devices Indium oxides Resultants Semiconductor devices Technical papers Thin films Transistors |
| title | Paper No S12.2: High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition |
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