Paper No S12.2: High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition

Paper No S12.2: High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition

Indium oxide film has been deposited by plasma‐enhanced atomic layer deposition and adopted as channel materials for high‐mobility thin‐film transistors. The resultant device fabricated at temperature of 200° C showed a field‐effect mobility of as high as 31 cm2/V s in linear region.

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Veröffentlicht in:SID International Symposium Digest of technical papers 2015-09, Vol.46 (S1), p.52-52
Hauptverfasser: Yeom, H. I., Ko, J. B., Hwang, C.-S., Cho, S., Park, S.-H. K.
Format: Artikel
Sprache:eng
Schlagworte:
Channels
Deposition
Devices
Indium oxides
Resultants
Semiconductor devices
Technical papers
Thin films
Transistors
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Beschreibung
Zusammenfassung:Indium oxide film has been deposited by plasma‐enhanced atomic layer deposition and adopted as channel materials for high‐mobility thin‐film transistors. The resultant device fabricated at temperature of 200° C showed a field‐effect mobility of as high as 31 cm2/V s in linear region.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10529