The Dominant Role of Exciton Quenching in PbS Quantum-Dot-Based Photovoltaic Devices

We present a quantitative measurement of the number of trapped carriers combined with a measurement of exciton quenching to assess limiting mechanisms for current losses in PbS-quantum-dot-based photovoltaic devices. We use photocurrent intensity dependence and short-wave infrared transient photolum...

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Veröffentlicht in:Nano Lett 2013-12, Vol.13 (12), p.5907-5912
Hauptverfasser: Wanger, Darcy D, Correa, Raoul E, Dauler, Eric A, Bawendi, Moungi G
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Sprache:eng
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Zusammenfassung:We present a quantitative measurement of the number of trapped carriers combined with a measurement of exciton quenching to assess limiting mechanisms for current losses in PbS-quantum-dot-based photovoltaic devices. We use photocurrent intensity dependence and short-wave infrared transient photoluminescence and correlate these with device performance. We find that the effective density of trapped carriers ranges from 1 in 10 to 1 in 10 000 quantum dots, depending on ligand treatment, and that nonradiative exciton quenching, as opposed to recombination with trapped carriers, is likely the limiting mechanism in these devices.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl402886j